ASC1N1700MF3PB 1A 10000mohm 12V

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Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size.
Features
⚫ High Speed Switching with Low Capacitances
⚫ AST Technology with 12V Gate Drive
⚫ Lower QG and Device Capacitances(Coss,Crss)
⚫ Body Diode with Low VF and Low QRR
⚫ Faster and More Efficient Switching
⚫ ROHS Compliant, Halogen free
Application
⚫ Solar String Inveter and Central Inverter
⚫ UPS
⚫ Switch Mode Power Supplies
⚫ Power Factor Correction Modules
⚫ Battery Charging
⚫ Auxiliary Power Supply
⚫ High Voltage Coverter