Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching
performance and higher reliability compared to Silicon. In addition, the low ON resistance and
compact chip size ensure low capacitance and gate charge. Consequently, system benefits include
highest efficiency, faster operating frequency, increased power density, reduced EMI, and
650V N-Channel MOSFET
reduced system size.
Features
⚫ Extremely low switching loss
⚫ High Blocking Voltage with Low RDS(on)
⚫ Excellent stability and uniformity
⚫ Easy to parallel and simple to drive
⚫ ROHS Compliant, Halogen free
Application
⚫ PC Power
⚫ EV Charger
⚫ LED Lighting
⚫ Server Power/Telecom Power
⚫ Solar PV inverters/UPS