NSD1224x is a powerful 120V half-bridge gate driver. With peak source/sink current of 3A/-4A and low Rdson of inside ON/OFF MOSFET, it can drive high-power MOSFETs with very low switching losses. The NSD1224x input pin and SW pin can withstand large negative voltage to improve system reliability. The input interlock function prevents the short-through from high-side and low-side MOSFETs in bridge topologies The undervoltage locking (UVLO) is available in both the high-side and low-side drivers. The small communication delay and channel to channel delay matching provide more dead time design margin, further improve efficiency. NSD1224x integrates a built-in bootstrap diode, requiring no external separate diode to save layout space and reduce system costs.
Product Features
– Withstand voltage of VDD power of 20V
– Withstand voltage at SW bridge arm midpoint of -10V to 115V
– Negative withstand voltage of input pin of -10V
– The HS voltage ramp up rate of 50V/ns
– Peak source/sink current 3A/-4A
– Compatible with CMOS/TTL level input
– Input interlock
– Independent UVLO protection for high-side and low-side output
– Integrated high-voltage bootstrap diode
– Typical input/output delay of 16ns
– Typical transmission delay matching between high and low sides of 1ns
– DFN10 package has enable pin, and the static power consumption is 7μA in standby mode
– Junction temperature range of -40°C to 150°C
Application
– Micro inverter and power optimizer
– Power module
– New energy vehicles